www.cj-elec.com 1 b,may,2015 jiangsu changjiang electron ics technology co., lt d df nwb5x2-6l-a plastic-encap sulate mosfets CJND2010 n-channel mosfet v (br )dss r ds(o n) max i d 20v 9.5m ? @4.5v 10a 10m ? @4v 10.5m ? @3.5v 11.5m ? @3.1v 13m ? @2.5v fea ture application ? trenchfet power mosfet load switch for portable applications ? small package dfnwb5 2-6l-a marking equivalent circuit absolute maximum ratings (t a =25 unless otherwise noted) symbol para meter v alue unit v ds drain-source voltag e 20 v v gs gate-source voltage 10 v i d continuous dr ain c urrent (note 1) 10 a i dm collector curr ent-pulse(note3) 36 a r ja thermal resistance from junc tion to ambie nt (note 2) 113.6 /w t j junction temperature 150 t st g storage temperature -55~ + 150 t l lead t emperature for soldering purposes(1/8?? from case for 10 s) 260 dfnwb5x2-6l-a
z z z f m h o h f f r p b,may,2015 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified para mete r symbol test condition min typ max unit st a tic parameters drain-s ourc e breakdown voltage v (br)ds s v gs = 0v, i d = 250a 20 v z ero gate volt age drain current i dss v ds = 20v,v gs = 0 v 1 ua gate-bod y l eakage current i gss v gs = 10v, v ds = 0 v 10 ua gate threshol d voltage (note 3) v gs(t h) v ds =v gs , i d = 250a 0.3 1 v drain-s ourc e on-resistance (note 3) r ds (o n) v gs =4.5v, i d =10a 5.5 9.5 m ? v gs =4 v, i d = 1 0a 5.8 10 m ? v gs =3.5v, i d =9a 6 10.5 m ? v gs =3.1v, i d =9a 6. 3 11.5 m ? v gs =2.5v, i d =8a 6. 8 13 m ? f o rward tranconductance (note 3) g fs v ds =5 v, i d = 10a 65 s diod e forward voltage (note 3) v sd i s =1 a, v gs = 0v 1 v dyn a mic parameters (note 4) input cap a citance c iss v ds = 10v,v gs =0 v,f =1mhz 1000 1510 pf output cap a citance c oss 150 290 pf revers e t ransfer capacitance c rss 100 235 pf switching pa r ameters (note 4) t u rn-on delay time t d( on) v gs =4 .5 v,v ds =10v, r gen =3 ? ,r l =1 1.1 ns t u rn-on rise time t r 2.6 ns t u rn-off delay time t d( o ff) 7 ns t u rn-off fall time t f 7.4 ns t o tal gate charge q g v ds = 10v,v gs =4. 5 v i d = 10a 10 15 nc gate-source chage q gs 5.5 nc gage-dr ain c harge q gd 6.5 nc no tes : 1.surface mounted on fr4 board using 1 square inch pad size,1oz copper. 2.surface mounted on fr4 board using the minimum pad size,1oz copper. 3. pulse test : pulse width=300 s, duty cycle 2%. 4. these parameters have no way to verify.
0.0 0 .2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 012345 0 4 8 12 16 20 12 34 5678910 6.6 6.8 7.0 7.2 7.4 7.6 7.8 024 68 1 0 0 10 20 30 0.0 0 .4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 25 50 75 100 125 0.2 0.4 0.6 0.8 1.0 t a =100 v sd i s ? ? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =2v, 2.5v,3v,4v v gs =1.5v o u tput characteristics v gs =1.2v drain current i d (a) drain to source voltage v ds (v) v gs =4v v gs =3.5v t a =25 pulsed puls ed puls ed pulsed v gs =4.5v t a =25 puls ed o n -resistance r ds ( on) (m ? ) drain current i d (a) i d ?? r ds(o n) v gs =2.5v v gs =3.1v t a =25 t a =100 i d =10a o n -resistance r ds( on) (m ? ) gate to source voltage v gs (v) v gs ?? r ds(o n) v ds =3v drain current i d (a) gate to source voltage v gs (v) t r ansfer characteristics t a =100 t a =25 i d =250ua t hr eshold voltage t hresho ld voltage v th (v) junction tem perature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v z z z f m h o h f f r p 3 b,may,2015
4 b,may,2015
!" ! #" !" !#" a1 0.000 0.050 0.000 0.002 a3 d 1.924 2.076 0.076 0.082 e 4.924 5.076 0.194 0.200 d1 1.350 1.550 0.053 0.061 e1 2.950 3.150 0.116 0.124 k b 0.200 0.300 0.008 0.012 e l 0.424 0.576 0.017 0.023 0.500typ. 0.020typ. $ %!& %%' 0.200min. 0.008min. 0.203ref. 0.008ref. a 0. 700 0.800 0.028 0.031
dfnwb5x2-6l tape and reel www.cj-elec.com 5 b,may,2015
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